Our paper entitled “Linear Electro-optic Effect in Ferroelectric HfO2-based Epitaxial Thin Films” has been published in Jpn. J. Appl. Phys. Rapid Communication. We found that the Y-HfO2 film showed a linear EO response, owing to its ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOS-compatible EO devices.
Citation: JJAP 60, 070905 (2021).
