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Published: Dynamic Electrical Response of Vortex Polarization in PST/STO Superlattice Thin Films

Our paper entitled “Dynamic Electrical Response of Vortex Polarization in (Pb0.9Sr0.1)TiO3/SrTiO3 Artificial Superlattice Thin Films” has been published in Appl. Phys. Lett. We found that the reorientation of dipole moments in the vortex domains is susceptible to the applied electric field pulses of 500 μs and is a reversible process. Although the centrosymmetric vortex domain structure is not considered to exhibit piezoelectricity, an evident change in the out-of-plane lattice constant with the applied electric field was revealed.

Citation: APL 121, 172904 (2022).

Published: Strong Electro-optic Effect in Mg Incorporated ZnO Thin Films

Our paper entitled “Strong Electro-optic Effect in Mg Incorporated ZnO Thin Films” has been published in Appl. Phys. Lett. We found that the Mg incorporation enhances the linear EO response significantly. In particular, the Zn0.72Mg0.28O thin film showed an effective EO coefficient of 7.6 pm/V, which is over three times larger than the reported values for ZnO-based thin films and over twice larger than that of ZnO single crystals. This study is the collaborative research with Dr. Meng of Institute of Semiconductors, Chinese Academy of Sciences.

Citation: APL 121, 152903 (2022).

Published: Revealing Intrinsic Electro-optic Effect in PZT

Our paper entitled “Revealing Intrinsic Electro-optic Effect in Single Domain Pb(Zr, Ti)O3 Thin Films” has been published in Appl. Phys. Lett. We revealed the intrinsic EO effect in PZT using the single domain films grown on CaF2 substrates. Our finding shows that the intrinsic EO effect is enhanced in PZT, which is similar to the enhancement seen in the dielectric and piezoelectric constants. Moreover, it tells us that most of the reported EO response in PZT films is supported by additional extrinsic contributions.

Citation: APL 119, 102902 (2021).

Published: Influence of Orientation on Electro-optic Effect in Ferroelectric HfO2 Films

Our paper entitled “Influence of Orientation on the Electro-optic Effect in Epitaxial Y-doped HfO2 Ferroelectric Thin Films” has been published in Jpn. J. Appl. Phys. We found that the (111)-Y-HfO2 film showed a larger EO response than that of the (100)-Y-HfO2 film, which is reasonable considering the difference in remnant polarization between the (100)- and (111)-Y-HfO2 films.

Citation: JJAP 60, SFFB13 (2021).

Published: Electro-optic Effect in Ferroelectric HfO2 Thin Films

Our paper entitled “Linear Electro-optic Effect in Ferroelectric HfO2-based Epitaxial Thin Films” has been published in Jpn. J. Appl. Phys. Rapid Communication. We found that the Y-HfO2 film showed a linear EO response, owing to its ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOS-compatible EO devices.

Citation: JJAP 60, 070905 (2021).

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URL of this web-site was changed from “http://enemat.nucl.nagoya-u.ac.jp/” to “https://enemat.energy.nagoya-u.ac.jp/”.