Energy Functional Materials Engineering Laboratory
Department of Energy Engineering, Nagoya University
A JST-ASPIRE workshop was held in Gamagori on Nov. 6–8. More than 70 participants from Japan (Institute of Science Tokyo, Kobe University, Osaka University, Osaka Metropolitan University, and Nagoya University), the United States (Pennsylvania State University, University of Pennsylvania, and Carnegie Mellon University), and Germany (NaMLab and Kiel University) gathered to discuss the development of novel ferroelectric thin films.
On Nov. 5, Dr. Uwe Schroeder and Dr. Roberto Guido (NaMLab, Germany) visited us and lectured on fluorite- and wurtzite-structured ferroelectrics.
Lecturer: Dr. Uwe Schroeder and Dr. Roberto Guido (NaMLab, Germany)
Fluorite- and Wurtzite-Structured Ferroelectrics: From Fundamentals to Semiconductor Applications
Maxwell Tolchin-san from Pennsylvania State University visited us and gave a seminar.
Kosuke ONO won the presentation award of The 45th Electronics Division Meeting of the Ceramic Society of Japan held in Keio University, Japan for his presentation on fabrication of defective-wurtzite Al2S3 thin films.
Our paper entitled “Scandium-doped Aluminum Nitride Thin Films by Scanning Combinatorial Pulsed Laser Deposition” has been published in Jpn. J. Appl. Phys. We demonstrated the growth of highly-crystalized epitaxial AlScN thin films by using scanning combinatorial PLD.
Haruka NADA won the grand prize of the dielectric materials session in The 38th Fall Meeting of the Ceramic Society of Japan held in Gunma University, Japan for her presentation on doped Y2Ti2O7 dielectric thin films.
Our review paper entitled “A New Era of Ferroelectric Thin Films for Nonvolatile Memories” has been published in MRS Bull. This special issue comprises seven reviews (for theoretical and experimental studies), including this one.
Our paper entitled “Effect of Sc Content on the Polarity of AlScN Thin Films Deposited on Indium Tin Oxide by Radio Frequency-magnetron Sputtering” has been published in Jpn. J. Appl. Phys. We found that the polarity is affected by both the degree of epitaxy and the amount of Sc content.
Our articles on Tunable Optical and Dielectric Properties of Ferroelectric Hafnia and Time-resolved XRD for Ferroelectric Films have been published as book chapters.
Our paper entitled “Composition Dependence of Electro-optic Effect in (111)/(11-1)-oriented Epitaxial Rhombohedral Pb(ZrxTi1−x)O3 Thin Films Prepared by Chemical Solution Deposition” has been published in Jpn. J. Appl. Phys. We found that the effective EO coefficient was not constant with respect to the applied field but varied with the magnitude of AC field due to dynamic domain motion, reaching its maximum value at a certain electric field.
