Our paper entitled “Thickness Dependence of the Electro-optic Properties in Epitaxial Hf0.5Zr0.5O2 Thin Films: Evident Response Down to 3 nm” has been published in Appl. Phys. Lett. We found that although the effective EO coefficient, reff, remained almost unchanged down to 10 nm and decreased with a further decrease in thickness, the evident EO response was observed down to 3 nm, which agrees with the fact that HZO films can maintain ferroelectric properties down to a few monolayers in thickness. The small reff in the HZO films with thickness below 5 nm is attributed to the stabilization of the ferroelectric rhombohedral-like phase.
