Published: Control of Mg content and carrier concentration for Sb-doped Mg2Si

Our paper entitled “Control of Mg Content and Carrier Concentration via Post Annealing under Different Mg Partial Pressures for Sb-doped Mg2Si Thermoelectric Material” has been published in J. Solid State Chem. The annealing process under high Mg partial pressure is an effective way to recover the thermoelectric performance of Mg-deficient Mg2Si-based materials.

Citation: J. Solid State Chem. 258, 93-98 (2018).

2024 Energy Func. Mater. Eng. Lab., Nagoya Univ. [Internal link]